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FGH40N6S2 / FGP40N6S2 / FGB40N6S2
August 2003
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: * * * * * * Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits
Features
* 100kHz Operation at 390V, 24A * 200kHZ Operation at 390V, 18A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC * Low Gate Charge . . . . . . . . . 35nC at VGE = 15V * Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical * UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ * Low Conduction Loss
IGBT (co-pack) formerly Developmental Type TA49438
Package
TO-247
E C G
Symbol
TO-220AB
E C G
C
TO-263AB
G
G E
COLLECTOR (Back-Metal)
COLLECTOR (Flange)
E
Device Maximum Ratings TC= 25C unless otherwise noted
Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS PD TJ TSTG Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC = 25C Collector Current Continuous, TC = 110C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150C, Figure 2 Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V Power Dissipation Total TC = 25C Power Dissipation Derating TC > 25C Operating Junction Temperature Range Storage Junction Temperature Range Ratings 600 75 35 180 20 30 100A at 600V 260 290 2.33 -55 to 150 -55 to 150 mJ W W/C C C Units V A A A V V
CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. Pulse width limited by maximum junction temperature.
(c)2003 Fairchild Semiconductor Corporation FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Package Marking and Ordering Information
Device Marking 40N6S2 40N6S2 40N6S2 40N6S2 Device FGH40N6S2 FGP40N6S2 FGB40N6S2 FGB40N6S2T Package TO-247 TO-220AB TO-263AB TO-263AB Reel Size Tube Tube Tube 330mm Tape Width N/A N/A N/A 24mm Quantity 30 50 50 800
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
BVCES BVECS ICES IGES Collector to Emitter Breakdown Voltage IC = 250A, VGE = 0 Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0 Collector to Emitter Leakage Current VCE = 600V TJ = 25C TJ = 125C Gate to Emitter Leakage Current VGE = 20V 600 20 250 2.0 250 V V A mA nA
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage IC = 20A, VGE = 15V TJ = 25C TJ = 125C 1.9 1.7 2.7 2.0 V V
Dynamic Characteristics
QG(ON) VGE(TH) VGEP Gate Charge Gate to Emitter Threshold Voltage Gate to Emitter Plateau Voltage IC = 20A, VCE = 300V VGE = 15V VGE = 20V 3.5 35 45 4.3 6.5 42 55 5.0 8.0 nC nC V V
IC = 250A, VCE = VGE IC = 20A, VCE = 300V
Switching Characteristics
SSOA td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF Switching SOA Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) IGBT and Diode at TJ = 125C ICE = 20A, VCE = 390V, VGE = 15V, RG = 3 L = 200H Test Circuit - Figure 26 TJ = 150C, VGE = 15V, RG = 3 L = 100H, VCE = 600V IGBT and Diode at TJ = 25C, ICE = 20A, VCE = 390V, VGE = 15V, RG = 3 L = 200H Test Circuit - Figure 26 100 8.0 10 35 55 115 200 195 14 18 68 85 115 380 375 260 85 105 450 600 A ns ns ns ns J J J ns ns ns ns J J J
Thermal Characteristics
RJC
NOTE: 2. Values
Thermal Resistance Junction-Case
TO-247
-
-
0.43
C/W
for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in figure 26.
3. Turn-Off
Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
(c)2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Typical Performance Curves
90 PACKAGE LIMITED 80 ICE , DC COLLECTOR CURRENT (A) 70 60 50 40 30 20 10 0 25 50 75 100
TJ = 25C unless otherwise noted
125 ICE, COLLECTOR TO EMITTER CURRENT (A) TJ = 150oC, RG = 3 VGE = 15V, L = 100H , 100
75
50
25
0 125 150 0 100 200 300 400 500 600 700 TC , CASE TEMPERATURE (oC) VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. DC Collector Current vs Case Temperature
1000 TC = 75oC fMAX, OPERATING FREQUENCY (kHz)
Figure 2. Minimum Switching Safe Operating Area
13 tSC , SHORT CIRCUIT WITHSTAND TIME (s) VCE = 390V, RG = 3 TJ = 125oC , 11
500 ISC, PEAK SHORT CIRCUIT CURRENT (A) 2.4
450
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) 10 PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 0.27oC/W, SEE NOTES
VGE = 15V
9 ISC 7
400
350
VGE = 10V
5 tSC 3
300
TJ = 125oC, RG = 3, L = 200H, V CE = 390V 1 1 10 30 60 ICE, COLLECTOR TO EMITTER CURRENT (A)
250 9 10 11 12 13 14 15 16 VGE , GATE TO EMITTER VOLTAGE (V)
Figure 3. Operating Frequency vs Collector to Emitter Current
40 ICE, COLLECTOR TO EMITTER CURRENT (A) 35 30 25 20 15 10 TJ = 150oC 5 TJ = 125oC 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 25oC PULSE DURATION = 250s ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE < 0.5%, VGE =10V
Figure 4. Short Circuit Withstand Time
40 DUTY CYCLE < 0.5%, VGE =15V 35 30 25 20 15 10 TJ = 150oC 5 TJ = 125oC 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 25oC PULSE DURATION = 250s
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
(c)2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Typical Performance Curves
1400 RG = 3 L = 200H, VCE = 390V , EON2 , TURN-ON ENERGY LOSS (J)
TJ = 25C unless otherwise noted
1400 RG = 3 L = 200H, VCE = 390V , EOFF, TURN-OFF ENERGY LOSS (J) 1000
1200 1000 800 600 400 200 0 0 5 10 15 TJ = 25oC, TJ = 125oC, VGE = 15V 20 25 30 35 40 TJ = 25oC, TJ = 125oC, VGE = 10V
800 TJ = 125oC, VGE = 10V, VGE = 15V 600
400
200 TJ = 25oC, VGE = 10V, VGE = 15V 0 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 7. Turn-On Energy Loss vs Collector to Emitter Current
20 RG = 3 L = 200H, VCE = 390V , td(ON)I, TURN-ON DELAY TIME (ns) 16 TJ = 25 C, TJ = 125 C, VGE = 10V 12
o o
Figure 8. Turn-Off Energy Loss vs Collector to Emitter Current
60 RG = 3 L = 200H, VCE = 390V , 50
trI , RISE TIME (ns)
40
30 TJ = 25oC, TJ = 125oC, VGE = 10V 20
8 TJ = 25oC, TJ = 125oC, VGE = 15V 4
10 TJ = 25oC, TJ = 125oC, VGE =15V
0 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
0 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 9. Turn-On Delay Time vs Collector to Emitter Current
80 RG = 3 L = 200H, VCE = 390V , td(OFF)I , TURN-OFF DELAY TIME (ns) 70
Figure 10. Turn-On Rise Time vs Collector to Emitter Current
100 RG = 3 L = 200H, VCE = 390V , 90
60 VGE = 10V, VGE = 15V, TJ = 125oC 50
tfI , FALL TIME (ns)
80 TJ = 125oC, VGE = 10V, VGE = 15V 70
40
60
30 VGE = 10V, VGE = 15V, TJ = 25oC 20 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
50 TJ = 25oC, VGE = 10V, VGE = 15V 40 0 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A)
Figure 11. Turn-Off Delay Time vs Collector to Emitter Current
Figure 12. Fall Time vs Collector to Emitter Current
(c)2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Typical Performance Curves
200 ICE, COLLECTOR TO EMITTER CURRENT (A) 175 150 125 100 75 TJ = 25oC 50 TJ = 125oC 25 0 3 4 5 6 7 8 9 TJ = -55oC DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250s
TJ = 25C unless otherwise noted
16 IG(REF) = 1mA, RL = 15 14 VGE, GATE TO EMITTER VOLTAGE (V) 12 VCE = 600V 10 VCE = 400V 8 6 4 VCE = 200V 2 0 10 11 12 0 5 10 15 20 25 30 35
VGE, GATE TO EMITTER VOLTAGE (V)
QG , GATE CHARGE (nC)
Figure 13. Transfer Characteristic
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 2.4 RG = 3 L = 200H, VCE = 390V, VGE = 15V , 2.0 ETOTAL = EON2 + EOFF 100
Figure 14. Gate Charge
TJ = 125oC, L = 200H, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF
1.6
ICE = 40A
10
1.2
ICE = 40A 1 ICE = 20A ICE = 10A
0.8
ICE = 20A
0.4 ICE = 10A 0 25 50 75 100
o
125
150
0.1 1.0
10
100
1000
TC , CASE TEMPERATURE ( C)
RG, GATE RESISTANCE ()
Figure 15. Total Switching Loss vs Case Temperature
3.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FREQUENCY = 1MHz 2.5 C, CAPACITANCE (nF)
Figure 16. Total Switching Loss vs Gate Resistance
4.0 DUTY CYCLE < 0.5% PULSE DURATION = 250s 3.6
2.0 CIES 1.5
3.2
2.8 ICE = 40A 2.4 ICE = 20A 2.0 ICE = 10A 1.6 6 7 8 9 10 11 12 13 14 15 16
1.0
COES
0.5 CRES 0.0 0 20 40 60 80 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 17. Capacitance vs Collector to Emitter Voltage
Figure 18. Collector to Emitter On-State Voltage vs Gate to Emitter Voltage
(c)2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Typical Performance Curves
TJ = 25C unless otherwise noted
ZJC , NORMALIZED THERMAL RESPONSE
10o 0.50
0.20 0.10 10-1 0.05 0.02 0.01 10-2 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 PD
t1
t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC
100
101
t1 , RECTANGULAR PULSE DURATION (s)
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
FGH40N6S2D DIODE TA49391 90% 10% EON2 L = 200H VCE RG = 3 90% + FGH40N6S2 VDD = 390V ICE 10% td(OFF)I tfI trI td(ON)I EOFF
VGE
Figure 20. Inductive Switching Test Circuit
Figure 21. Switching Test Waveforms
(c)2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
FGH40N6S2 / FGP40N6S2 / FGB40N6S2
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gatevoltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 27. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by P C = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 27. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turnon and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0)
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
(c)2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
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No Identification Needed
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Obsolete
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I5

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